Chanzon 7N60 TO-220F NMOS N-Channel Power MOSFET Transistor - High Power Dissipation, 600V 7A (10-Pack) - Ideal for Power Supplies, Motor Control, and Electronic Circuits

Silicon N-Channel Power MOSFETExperience high efficiency and system miniaturization with our CS7N60F A9HD Enhanced VDMOSFET. Ideal for power switch circuits in adaptors and chargers, this MOSFET offers:Fast Switching for quick response times.Improved ESD Capability for enhanced protection against electrostatic discharge.Low Gate Charge (Typical: 28nC) for efficient power management.Low Reverse Transfer Capacitances (Typical: 12pF) for minimal signal interference.Avalanche Energy Test ensuring reliability under high-energy conditions.Key Specifications:Drain-to-Source Voltage (VDSS): 600VContinuous Drain Current (ID): 7A at 25°C, 4.5A at 100°CGate-to-Source Voltage (VGS): ±30VSingle Pulse Avalanche Energy (EAS): 550mJAvalanche Current (IAR): 3.3APeak Diode Recovery dv/dt (a3): 5.0V/nsPower Dissipation (PD): 40W at 25°C, with a derating factor of 0.32W/°C above 25°COperating Junction and Storage Temperature Range: -55 to 150°CMaximum Temperature for Soldering (TL): 300°COptimized for performance and reliability, our MOSFET features a robust design that meets the RoHS standard in a TO-220F package. It's the perfect choice for applications demanding high efficiency and compact design.Warning: Use within 80% of maximum ratings to ensure device reliability and longevity. Handle with care to protect from static electricity.