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Transistor Type: High Power N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Transistor Polarity: N-Channel NMOS MOSFET Transistor, characterized by low on-state resistance and high switching speed. Specification: Manages a drain-source voltage (VDSS) up to 650V, drain current (ID) up to 7A, and offers a low on-state resistance (RDS(on)) of 1.2 Ω, with power dissipation (PD) of 142W. Application: Commonly utilized for high-performance switching, amplification, and power management applications, notably in power supplies and motor controls. Package: Ships in an anti-static bag for electrostatic protection, ensuring ESD safety and maintaining a long shelf life. › See more product details
Transistor Type High Power N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
Transistor Polarity N-Channel NMOS MOSFET Transistor, characterized by low on-state resistance and high switching speed.
Specification Manages a drain-source voltage (VDSS) up to 650V, drain current (ID) up to 7A, and offers a low on-state resistance (RDS(on)) of 1.2 Ω, with power dissipation (PD) of 142W.
Application Commonly utilized for high-performance switching, amplification, and power management applications, notably in power supplies and motor controls.
Package Ships in an anti-static bag for electrostatic protection, ensuring ESD safety and maintaining a long shelf life.